Author/Authors :
Jeong-Ho Cho، نويسنده , , Young-Jun Byun، نويسنده , , Jin-Ho Kim، نويسنده , , Young-Jin Lee، نويسنده , , Young Hun Jeong، نويسنده , , Myoung-Pyo Chun، نويسنده , , Jong-Hoo Paik، نويسنده , , Tae Hyun Sung، نويسنده ,
Abstract :
Thin films of tungsten-doped vanadium oxide were fabricated on an alumina substrate by spin coating technology. A V2O5 solution was prepared by an inorganic sol–gel method, which was a fairly cheap and effective process. As-coated V2O5 films turned to VO2 films during heat treatment in a reducing gas flow. Non-doped VO2 film exhibited the best switching property of 4.0 orders of magnitude of electrical resistance and a small hysteresis of approximately 5 °C width. Tungsten in VO2 led to a diffuse phase transition and weak jump of electrical resistivity. A reduction of the transition temperature by 15.5 °C/mol was observed for the tungsten doping in this study.
Keywords :
A. Films , C. Electrical properties , E. Thermal applications , THERMOCHROMIC