Characteristics of Ti-doped ITO films grown by DC magnetron sputtering

We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 1020 cm−3, a mobility of 34 cm2/V s, and a resistivity of 2.3 × 10−4 Ω cm. The ITO:Ti film also shows a better thermal stability up to 450 °C.