Title of article :
Effects of annealing temperature on the photocatalytic activity of N-doped TiO2 thin films
Author/Authors :
Moo-Chin Wang، نويسنده , , Huey-Jiuan Lin، نويسنده , , Chien-Ho Wang، نويسنده , , Hsuan-Chung Wu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
The effects of annealing temperature on the photocatalytic activity of nitrogen-doped (N-doped) titanium oxide (TiO2) thin films deposited on soda-lime-silica slide glass by radio frequency (RF) magnetron sputtering have been studied. Glancing incident X-ray diffraction (GIAXRD), Raman spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectra were utilized to characterize the N-doped TiO2 thin films with and without annealing treatment. GIAXRD and Raman results show as-deposited N-doped TiO2 thin films to be nearly amorphous and that the rutile and anatase phases coexisted when the N-doped TiO2 thin films were annealed at 623 and 823 K for 1 h, respectively. SEM microstructure shows uniformly close packed and nearly round particles with a size of about 10 nm which are on the slide glass surface for TiO2 thin films annealed at 623 K for 1 h. AFM image shows the lowest surface roughness for the N-doped TiO2 thin films annealed at 623 K for 1 h. The N-doped TiO2 thin films annealed at 623 K for 1 h exhibit the best photocatalytic activity, with a rate constant (ka) of about 0.0034 h−1.
Keywords :
N-TiO2 film , RF sputtering , Annealing , photocatalysis
Journal title :
Ceramics International
Journal title :
Ceramics International