Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

This paper focuses on the electrical properties of Bi0.95Nd0.05FeO3 thin films (BNFO05) deposited on Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. A BNFO05 single phase was simultaneously grown at a temperature of 500 °C for 2 h. Room temperature magnetic coercive field indicates that the film is magnetically soft. The remanent polarization (Pr) and the coercive field (Ec) measured were 51 μC/cm2 and 65.0 kV/cm, respectively, and were superior to the values found in the literature. XPS results show that the oxidation state of Fe is purely 3+, which is beneficial for producing a BNFO05 film with low leakage current. The polarization of the Au/BNFO05 on Pt/TiO2/SiO2/Si (100) capacitors with a thickness of 230 nm exhibited no degradation after 1×108 switching cycles at a frequency of 1 MHz. Experimental results demonstrated that the soft chemical method is a promising technique for growing films with excellent electrical properties, and can be used in various integrated device applications.