Enhancement of electrical properties of (Gd, V) co-doped BiFeO3 thin films prepared by chemical solution deposition

Pure BiFeO3 (BFO) and (Bi0.9Gd0.1)(Fe0.975V0.025)O3+δ(BGFVO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1×10−5 A/cm2 at 100 kV/cm. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the BGFVO thin film were 54 μC/cm2 and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2Pr values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz.