Optical and photoelectrochemical properties of a TiO2 thin film doped with a ruthenium–tungsten bimetallic complex

Optical and photoelectrochemical (PEC) properties of a TiO2 thin film electrode doped with a new variation of ruthenium–(4,4′dimethyl-2,2′-bipyridine)–isothiocyanato–tungsten[bis-(phenyl-1,2-ethilenodithiolenic)] bimetallic complex (BM) were investigated. Physical adsorption process was used to immobilise the BM on the TiO2 thin film. Crystalline structure and surface morphology of the thin films were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) techniques. N3 commercial dye was also used as a dopant to the TiO2 films for comparison. Light absorption spectra and bandgap energy of the thin films were determined using UV–vis spectroscopy. Light absorption of the TiO2 thin film doped with BM was better than the TiO2 doped with the N3 commercial dye. Band edges of the TiO2 thin film and the BM were determined via cyclic voltammetry (CV) measurements. Top-edge of the BM valence band (VB) was more positive than the bottom edge of the conduction band (CB) of the TiO2 film (vs. NHE). PEC analysis indicated that photocurrent of TiO2 doped with the BM electrode was higher than TiO2 doped with the N3 in the beginning of illumination process, but the performance was defeated after a while. Based on the optical properties and the PEC analyses, BM has potential to be used as dye sensitisers for a PEC cell.