Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Ti4+

The microwave dielectric properties of Zn2(Sn(1−x)Tix)O4 ceramics were examined with a view to their exploitation for mobile communication. The Zn2(Sn(1−x)Tix)O4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn2(Sn0.95Ti0.05)O4 ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.26 g/cm3 was obtained for Zn2(Sn0.95Ti0.05)O4 ceramic, sintered at 1225 °C for 4 h. Dielectric constant (ε r) of 9.86, quality factor (Q ×f ) of 76,900 GHz, and temperature coefficient of resonant frequency (τfτf) of −38.6 ppm/°C were obtained for Zn2(Sn0.95Ti0.05)O4 ceramics that were sintered at 1225 °C for 4 h.