Title of article :
Investigation of MOSFET operation in bipolar mode
Author/Authors :
Pershenkov، V.S. نويسنده , , Belyakov، V.V. نويسنده , , Cherepko، S.V. نويسنده , , Shvetzov-Shilovsky، I.N. نويسنده , , Abrarnov، V.V. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si-SiOz interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Dynamic thermal modeling of IC packages , Measuring of thermal coupling in ICs , Thermal benchmark IC
Journal title :
MICROELECTRONICS RELIABILITY
Journal title :
MICROELECTRONICS RELIABILITY
