ONO and NO interpoly dielectric conduction mechanisms

Interpoly stacked-dielectric conduction mechanisms are investigated. Extensive Si3N4 and SiO2 single-layer transport analysis leads to a clear multi-layer dielectric understanding. An improved carrier-separation model is proposed for a 35 A-thick SiO2 and applied to ONO results. NO electrical behavior is satisfactorily modelled under both gate polarities.