Title of article
Dielectric characterization of ferroelectric thin films deposited on silicon
Author/Authors
Velu، G. نويسنده , , Legrand، C. نويسنده , , Haccart، T. نويسنده , , Chambonnet، D. نويسنده , , Remiens، D. نويسنده , , Burgnies، L. نويسنده , , Mehri، F. نويسنده , , Carru، J.C. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-250
From page
251
To page
0
Abstract
This paper describes some experimental results concerning the dielectric characterizations of PZT, PT and BT ferroelectric thin films deposited on silicon. Firstly, the ferroelectric properties of these films are checked, notably the high dielectric constant values. Secondly, assuming a simple electrical model, we derive from impedance measurements the conductivity of the platinum deposited as a bottom electrode.
Keywords
Dynamic thermal modeling of IC packages , Measuring of thermal coupling in ICs , Thermal benchmark IC
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
12885
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