MOCVD of ferroelectric thin films

A low-pressure chemical vapor deposition system for growing ferroelectric thin PZT films has been developed. It consists of a dispensing and vaporizing system for up to four liquid metal precursors and a cold wall reactor, where the reactions are carried out at pressures below I Torr and at temperatures between 330 and 500°C. The thickness of the deposited films ranged from 10 nm to 1 (mo)m. The investigated films in this report are lead-titanate, PbTiO3 and lead-zirconate-titanate, Pb(Zr,Ti)O3.