Title of article :
High electrical resistivity of CVD-diamond
Author/Authors :
Manca، J.V. نويسنده , , Nesladek، M. نويسنده , , Neelen، M. نويسنده , , Quaeyhaegens، C. نويسنده , , Schepper، L. De نويسنده , , Ceuninck، W. De نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-268
From page :
269
To page :
0
Abstract :
Due to its combination of excellent thermo-mechanical properties and electrical properties such as the high electrical resistivity and high dielectric strength, diamond seems a promising material for specialized dielectric applications. Due to the great advances in the growth technology of diamond films by chemical vapour deposition (CVD) on e.g. Si-substrates, new applications can be expected in microelectronics. An important technological result for dielectric applications is that high electrical resistivity diamond films can be obtained after an appropriate heat treatment of the as-grown films.
Keywords :
Thermal benchmark IC , Measuring of thermal coupling in ICs , Dynamic thermal modeling of IC packages
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
12892
Link To Document :
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