Title of article :
Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview
Author/Authors :
Lee، J.C. نويسنده , , Croft، G.D. نويسنده , , Liou، J.J. نويسنده , , Young، W.R. نويسنده , , Bernier، J. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-578
From page :
579
To page :
0
Abstract :
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models called the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Microstructural analysis , Aluminum alloys , Resistance measurements , Electromigration
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
12959
Link To Document :
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