Title of article
Junction parameters for silicon devices characterization
Author/Authors
Hoffmann، Jules A. نويسنده , , Charles، J.-P. نويسنده , , Bardonnie، M. de la نويسنده , , Toufik، N. نويسنده , , Salame، C. نويسنده , , Dib، S. نويسنده , , Mialhe، P. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-750
From page
751
To page
0
Abstract
An innovative method for device characterization is developed to qualify microelectronic devices. The method is based on parameter extraction from the junction I-V characteristics. Their evolution during electrical aging and ionizing radiation experiments allows an evaluation of the magnitude of the degradation. Results obtained with commercial samples show a signature of both manufacturer and technological processes. This method is easy to implement in a control process for device characterization. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
12990
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