Title of article :
HBM and TLP ESD robustness in smart-power protection structures
Author/Authors :
Meneghesso، G. نويسنده , , Zanoni، E. نويسنده , , Santirosi، S. نويسنده , , Novarini، E. نويسنده , , Contiero، C. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-838
From page :
839
To page :
0
Abstract :
In this paper we will present data concerning the ESD robustness of smart power protection structures (BCD technology) for input-output circuits. A comparison between the robustness of "p-body" and "p-well" based structures and a study of the influence of layout parameters on the ESD robustness will be given. The correlation between ESD robustness obtained with different test methods (HBM and TLP) will be also presented. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13017
Link To Document :
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