Title of article :
Anisotropy of the selenium diffusion coefficient in bismuth telluride Original Research Article
Author/Authors :
M Chitroub، نويسنده , , S Scherrer، نويسنده , , H Scherrer، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
9
From page :
1693
To page :
1701
Abstract :
We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The single crystals were prepared by travelling heater method and they have a high crystalline quality. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS. We propose a mechanism of atomic diffusion by antisite defects and thermal vacancies taking into account of the anisotropy of the diffusion coefficients.
Keywords :
A. Semiconductors , D. Diffusion , D. Defects
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2000
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1307613
Link To Document :
بازگشت