A new method for the preparation of crystalline GaxSe1−x Original Research Article

X-ray powder data are presented and analysed for the semiconducting compound GaxSe1−x (x=0.2, 0.3, 0.4), which was prepared by the melt-quenching method. X-ray diffraction shows the crystalline nature of the compound. This behaviour is anomalous and contrary to the normal practice because amorphous materials are obtained by the melt-quenching technique; but in the case of GaSe it has been proved that one can obtain the crystalline material by using the melt-quenching technique (which of course is a quicker process). Such behaviour may be attributed to the very low equilibrium time of the GaSe compound.