Structure and transport properties of polycrystalline Bi films Original Research Article

Polycrystalline bismuth thin films were deposited on glass substrates at room temperature by pulsed Nd:YAG laser deposition. Some relevant aspects of the microstructure of the Bi films as a function of film thickness are reported. In addition, the electrical resistivity, the Hall coefficient and the thermoelectric power were measured between 80 and 380 K in films ranging from 25 to 450 nm in thickness. The transport properties are discussed and compared to previous studies.