Title of article :
Temperature-dependent electronic structure of Nd1−xSmxNiO3 Original Research Article
Author/Authors :
K Okazaki، نويسنده , , T Mizokawa، نويسنده , , A Fujimori، نويسنده , , E.V Sampathkumaran، نويسنده , , J.A. Alonso، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
4
From page :
975
To page :
978
Abstract :
RNiO3 (R: rare earth) is one of the typical bandwidth-control metal–insulator transition systems. Its metal–insulator transition temperature (TMI) is the same as the antiferromagnetic transition temperature (TN) for R=Pr and Nd, while TMI is higher than TN for R=Sm and Eu. The boundary between the two types of phase transitions is located between NdNiO3 and SmNiO3. We have measured photoemission spectra of Nd1−xSmxNiO3 at various temperatures above and below TMI. The spectra show quite different temperature dependences between x≤0.4 and x≥0.6. For x≤0.4, the spectral intensity near the Fermi level (EF) is temperature-dependent even well below TMI, while for x≥0.6 it shows a significant temperature dependence only near TMI. Also, the spectra near EF above TMI show a pseudo-gap like behavior for x≥0.6. From these results, we conclude that the metallic phase has different natures between x≤0.4 and x≥0.6.
Keywords :
A. Oxides , C. Photoelectron spectroscopy , D. Electronic structure , D. Phase transitions
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2002
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1307873
Link To Document :
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