• Title of article

    Electron density distribution in GaAs using MEM Original Research Article

  • Author/Authors

    Ramachandran Saravanan، نويسنده , , Yasuhiro Ono، نويسنده , , Minoru Isshiki، نويسنده , , Kahoru Ohno، نويسنده , , Tsuyoshi Kajitani، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    8
  • From page
    51
  • To page
    58
  • Abstract
    Electron density distribution of GaAs is determined by means of the maximum entropy method (MEM) using reasonably good X-ray data collected at room temperature and 200 K. The bonding electron distributions are clearly visible in the MEM map and the mixed covalent–ionic character in GaAs is evidenced. The density distributions at 200 K show more condensed electronic clouds as compared to the room temperature map, preserving the trend in the bonding characters. The electron densities at the middle of the bond are 0.79 and 0.70 e/Å3 at 200 K and at room temperature, respectively. The refined harmonic thermal factors are in good agreement with the published values.
  • Keywords
    C. X-ray diffraction , A. Inorganic compounds , D. Electrical properties
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2003
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1308129