Title of article :
Electron density distribution in GaAs using MEM
Original Research Article
Author/Authors :
Ramachandran Saravanan، نويسنده , , Yasuhiro Ono، نويسنده , , Minoru Isshiki، نويسنده , , Kahoru Ohno، نويسنده , , Tsuyoshi Kajitani، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
Electron density distribution of GaAs is determined by means of the maximum entropy method (MEM) using reasonably good X-ray data collected at room temperature and 200 K. The bonding electron distributions are clearly visible in the MEM map and the mixed covalent–ionic character in GaAs is evidenced. The density distributions at 200 K show more condensed electronic clouds as compared to the room temperature map, preserving the trend in the bonding characters. The electron densities at the middle of the bond are 0.79 and 0.70 e/Å3 at 200 K and at room temperature, respectively. The refined harmonic thermal factors are in good agreement with the published values.
Keywords :
C. X-ray diffraction , A. Inorganic compounds , D. Electrical properties
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids