Title of article :
Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers☆ Original Research Article
Author/Authors :
T. Bak، نويسنده , , J. Nowotny *، نويسنده , , M. Rekas، نويسنده , , C.C. Sorrell، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
19
From page :
1069
To page :
1087
Abstract :
The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms: The mobility data determined in this work were then used for verification of defect chemistry disorder models and a good agreement was revealed.
Keywords :
D. Defects , D. Electrical conductivity , D. Electrical properties , A. Electronic materials , D. Semiconductivity , D. Transport properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2003
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1308263
Link To Document :
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