Title of article
Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers☆ Original Research Article
Author/Authors
T. Bak، نويسنده , , J. Nowotny *، نويسنده , , M. Rekas، نويسنده , , C.C. Sorrell، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
19
From page
1069
To page
1087
Abstract
The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms:
The mobility data determined in this work were then used for verification of defect chemistry disorder models and a good agreement was revealed.
Keywords
D. Defects , D. Electrical conductivity , D. Electrical properties , A. Electronic materials , D. Semiconductivity , D. Transport properties
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2003
Journal title
Journal of Physics and Chemistry of Solids
Record number
1308263
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