Author/Authors :
Theodore J. Cieslak، نويسنده , , H. Metzner، نويسنده , , Th. Hahn، نويسنده , , U. Reisl?hner، نويسنده , , U. Kaiser، نويسنده , , J. Kr?u?lich، نويسنده , , W. Witthuhn، نويسنده ,
Abstract :
CuGaS2 has been grown epitaxially on Si(111) substrates by three-source molecular beam epitaxy. The structural properties of these layers have been investigated by means of X-ray diffraction, high-resolution electron microscopy, and selected-area electron diffraction. It is found that CuGaS2 crystallizes exclusively in the chalcopyrite structure. The interface region exhibits a strong tendency to form stacking faults. The epitaxial growth is characterized and it is shown that the epilayers compensate the lattice mismatch to the Si substrates by means of a small tilt of about 0.8° between the CuGaS2 〈221〉 directions and the [111] surface normal of the Si substrate.
