Determination of a pseudo-binary SrSe–Ga2Se3 phase diagram and single crystal growth of SrGa2Se4 compounds Original Research Article

We have investigated chemical reaction processes and thermal characteristics of IIa–III2–VI4 compounds in order to grow their single bulk crystals. Up to now, single crystals of Ca and Sr thiogallates have been successfully grown by the melt growth method based on their pseudo-binary phase diagrams. Here, a similar diagram of the SrSe–Ga2Se3 system has been constructed for the first time, where a eutectic reaction is found in the range of excess Ga2Se3 concentration, and it is shown that the SrGa2Se4 compound has a congruent melting point (1110 °C) suitable for the melt growth. A single crystal is grown from the melt by the horizontal Bridgman method. A trial is also made to grow a high-quality single crystal of CaGa2S4 already known as being grown easily.