Author/Authors :
M. Rusu، نويسنده , , A. Rumberg، نويسنده , , Randall S. Schuler، نويسنده , , S. Nishiwaki، نويسنده , , R. Würz، نويسنده , , S.M. Babu، نويسنده , , M. Dziedzina، نويسنده , , C. Kelch، نويسنده , , S. Siebentritt، نويسنده , , R. Klenk a، نويسنده , , Th. Schedel-Niedrig، نويسنده , , M.Ch. Lux-Steiner، نويسنده ,
Abstract :
We present an optimisation of our recipe for the CdS chemical bath deposition process as applied to solar cells based on polycrystalline CuGaSe2 (CGSe) absorber layers prepared in two stages by physical vapour deposition. We investigate the influence of the ammonia (NH3) and the thiourea (H2NCSNH2) concentration, both being constituents of the chemical bath deposition (CBD) solution, at a deposition temperature of 80 °C on the microstructural and optical properties of CdS layers and on ZnO/CdS/CuGaSe2/Mo device parameters. The composition of the CdS layers and their thickness were determined using X-ray Fluorescence Analysis. Transmission and reflection measurements performed at 300 K were used for the calculation of absorption and optical band gap energy (Eg). The Eg values of the films varied from 2.41 to 2.46 eV depending on deposition conditions. Cubic phase of the as-grown layers was identified by X-ray diffraction analysis. An improvement in the investigated solar cells efficiency was achieved when the ammonia concentration was increased and the thiourea concentration was reduced, compared to the previously used standard HMI recipe. The influence of the CBD CdS preparation recipe on the ZnO/CdS/CuGaSe2/Mo electrical and photoelectrical properties is discussed.
Keywords :
A. CdS , B. Chemical bath deposition , A. CuGaSe2 , C. Quantum efficiency , D. Transport mechanism