Title of article
Emission characteristics of CuGaS2-based light-emitting diode grown by metalorganic vapor phase epitaxy Original Research Article
Author/Authors
Tohru Honda)، نويسنده , , Kazuhiko Hara، نويسنده , , Junji Yoshino، نويسنده , , Hiroshi Kukimoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
3
From page
2001
To page
2003
Abstract
Phosphorus-doped CuGaS2 layers were grown on (001) GaP substrates by metalorganic vapor phase epitaxy. The p-type conductivity was controllable under the phosphine flow rate conditions. The rectification characteristics of a p-CuGaS2/n-GaP heterostructure indicated that the p–n junction was formatted. Orange light electroluminescence was observed from the CuGaS2-based diode at room temperature.
Keywords
Metalorganic vapor phase deposition , Doping , Impurities , Light-emitting diodes , Sulphides , Semiconducting ternary compounds
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2003
Journal title
Journal of Physics and Chemistry of Solids
Record number
1308413
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