Emission characteristics of CuGaS2-based light-emitting diode grown by metalorganic vapor phase epitaxy Original Research Article

Phosphorus-doped CuGaS2 layers were grown on (001) GaP substrates by metalorganic vapor phase epitaxy. The p-type conductivity was controllable under the phosphine flow rate conditions. The rectification characteristics of a p-CuGaS2/n-GaP heterostructure indicated that the p–n junction was formatted. Orange light electroluminescence was observed from the CuGaS2-based diode at room temperature.