Role of oxygen and carbon on donor formation in step-annealed CZ-silicon Original Research Article

Step-annealing schedules for two different annealing chains, i.e. 450–650–450 and 650–450–700 °C have been followed to study the effect of oxygen and carbon on donor formation in carbon-rich Czochralski-silicon. It has been found that the annealing time does not have reasonable effect on substitutional carbon atoms. On the other hand, interstitial oxygen atoms are drastically reduced depending on annealing temperature. Carbon concentration does not exhibit any relationship with new donor (ND) concentration. The result suggests that the ND formation is not controlled by the substitutional carbon concentration directly, but by a density of some unknown embryos. The energy of formation of NDs was found to be 1.84 eV. All these results with plausible explanation are reported here.