Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films Original Research Article

The electrical conductivity σ, Hall effect RH, and thermoelectric power Q of CuGa0.25In0.75Se2 thin films with different growth conditions have been measured at temperature 300–520 K. These properties were also measured at room temperature for different composition of CuGaxIn1−xSe2 (0.75≥x≥0) deposited at the same evaporation conditions. All investigated films are p-type over the whole temperature range. Electrical conduction was studied in order to establish its mechanism. The room temperature photoelectric response of those films were measured as a function of wavelength (2.5≥λ≥0.3) μm. It is found that the energy gap values follow a second order equation in x giving a downward bowing parameter of about 0.31 eV.