Title of article
Conduction behaviour and thermoelectric power of Agx (As0.4Se0.6) 100−x chalcogenide system Original Research Article
Author/Authors
A.M. Ahmed، نويسنده , , N.M. Megahid، نويسنده , , M.M. Wakkad، نويسنده , , A.K. Diab، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
1274
To page
1280
Abstract
Chalcogenide bulk alloys of Agx (As0.4Se0.6) 100−x (x=5, 7.5, 10, 12.5, 15 and 17.5) system were prepared by the conventional melt-quench technique. The d.c. electrical conductivity (σ) and thermoelectric power (TEP) measurements were carried out in the temperature range from 83 to 373 K and from 253 to 373 K, respectively. Variations of both σ and TEP with ambient temperature proved the p-type semiconducting behaviour of these materials. The current density-electric field characteristics were found to be linear. The activation energies, calculated from both the electrical conductivity Eσ and thermoelectric power Es, were found to be dependent on composition.
Keywords
Ionic conductivity , XRD , Mott parameters , Activation energy , Seebeck coefficient , Agx(As0.4Se0.6)100?x , D. Electrical conductivity
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2005
Journal title
Journal of Physics and Chemistry of Solids
Record number
1309015
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