Title of article :
Temperature dependence of thermoelectric properties of Ni-doped CoSb3 Original Research Article
Author/Authors :
Hiroyuki Kitagawa، نويسنده , , Machiko Wakatsuki، نويسنده , , Hisanori Nagaoka، نويسنده , , Hiroyuki Noguchi، نويسنده , , Yukihiro Isoda، نويسنده , , Kazuhiro Hasezaki، نويسنده , , Yasutoshi Noda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
1635
To page :
1639
Abstract :
Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb3 have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb3 is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co1−xNixSb3 is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10−4 K−1 at 600 K, was obtained for x=0.05.
Keywords :
A. Semiconductors , D. Electrical properties , D. Thermal conductivity , A. Intermetallic compounds , D. Transport properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309098
Link To Document :
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