The influence of microscopic parameters on the ionic conductivity of SrBi2(Nb1−xVx)2O9−δ(0≤x≤0.3) ceramics Original Research Article

Layered SrBi2(Nb1−xVx)2O9−δ (SBVN) ceramics with x lying in the range 0–0.3 (30 mol%) were fabricated by the conventional sintering technique. The microstructural studies confirmed the truncating effect of V2O5 on the abnormal platy growth of SBN grains. The electrical conductivity studies were centred in the 573–823 K as the Curie temperature lies in this range. The concentration of mobile charge carriers (n), the diffusion constant (D0) and the mean free path (a) were calculated by using Rice and Roth formalism. The conductivity parameters such as ion-hopping rate (ωp) and the charge carrier concentration (K′) term have been calculated using Almond and West formalism. The aforementioned microscopic parameters were found to be V2O5 content dependent on SrBi2(Nb1−xVx)2O9−δ ceramics.