Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers Original Research Article

Cu(In,Ga)Se2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers are discussed in this paper. The device performances are compared by applying CBD ZnS(O,OH), CBD Zn–Cd–S(O,OH), and CBD CdS buffer layers on similar CIGS absorbers. The C6-point double bond; length half of m-dashN impurities in CBD ZnS(O,OH) are identified with Fourier transform infrared spectroscopy (FTIR) techniques. The impurities containing carbon-nitrogen bonds are most likely cyanamide (NCN2−) or thiocyanate (SCN−), which resulted from the chemical reaction of thiourea and ammonia.