Title of article :
Correlation of stability to varied CdCl2 treatment and related defects in CdS/CdTe PV devices as measured by thermal admittance spectroscopy Original Research Article
Author/Authors :
R. Albert Enzenroth، نويسنده , , K.L. Barth، نويسنده , , W.S. Sampath، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
1883
To page :
1886
Abstract :
A correlation between the CdCl2 treatment and the change in conversion efficiency with light and heat stress indoors (stability) has been shown previously by our group for CdS/CdTe:Cu PV devices. In the present work CdTe devices were fabricated with various CdCl2 treatments and with and without a Cu containing back contact. The electrical characteristics of the defects acting as traps in these devices were studied using thermal admittance spectroscopy (TAS). The activation energy Et−EV, the apparent capture cross section and the densities of state functions (using Walterʹs method) of the traps in the devices were estimated.
Keywords :
D. Electrical properties , A. Semiconductors , A. Thin films
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309144
Link To Document :
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