• Title of article

    Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy Original Research Article

  • Author/Authors

    R. BACEWICZ?، نويسنده , , A. Twar?g، نويسنده , , A. Malinowska، نويسنده , , T. Wojtowicz، نويسنده , , X. Liu، نويسنده , , J.K Furdyna، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    2004
  • To page
    2007
  • Abstract
    Local structure of Mn atoms in Ga1−xMnxAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15–25% of Mn atoms are in interstitial sites in the as grown films. The Mn–As bond length has been found longer than Ga–As bond length in GaAs for both substitutional (MnGa) and interstitial (MnI) sites.
  • Keywords
    A. Semiconductors , C. EXAFS , XANES
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2005
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1309172