Title of article :
Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy
Original Research Article
Author/Authors :
R. BACEWICZ?، نويسنده , , A. Twar?g، نويسنده , , A. Malinowska، نويسنده , , T. Wojtowicz، نويسنده , , X. Liu، نويسنده , , J.K Furdyna، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Local structure of Mn atoms in Ga1−xMnxAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15–25% of Mn atoms are in interstitial sites in the as grown films. The Mn–As bond length has been found longer than Ga–As bond length in GaAs for both substitutional (MnGa) and interstitial (MnI) sites.
Keywords :
A. Semiconductors , C. EXAFS , XANES
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids