Title of article
Mn1−xFexIn2Se4: a new layered semiconductor system Original Research Article
Author/Authors
V. Sagredo، نويسنده , , Rosalie T. Torres، نويسنده , , G. Attolini، نويسنده , , F. Bolzoni ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
3
From page
2027
To page
2029
Abstract
Mn1−xFexIn2Se4 compounds (x =0.1; x =0.7) were grown by the chemical vapor transport method. X-ray diffraction analysis data show that these compositions crystallize as different polytypes that belong to the hexagonal structure. The crystal symmetry of the sample with x =0.1 belongs to the space group RView the MathML source3¯m and for the sample with x=0.7 the space group is P63mc.
The magnetic behavior of both samples has been investigated in the temperature range between 5 and 300 K. Spin-glass-like behavior below the freezing temperature Tf=9 K has been found for the sample with x=0.7. The sample with Fe content x=0.1 behaves as a paramagnet down to the lowest experimental measured temperature. High-temperature susceptibility data follow the Curie–Weiss law with a negative paramagnetic temperature indicating predominant antiferromagnetic interactions.
Optical studies reveal that both samples (x=0.1; 0.7) are direct band gap semiconductors. The temperature dependence of the energy gap fits Varshni relation quite well.
Keywords
Semiconductors , Crystal growth , X-ray diffraction , Magnetic properties
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2005
Journal title
Journal of Physics and Chemistry of Solids
Record number
1309178
Link To Document