Title of article :
X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO Original Research Article
Author/Authors :
C. Sternemann، نويسنده , , J.A. Soininen، نويسنده , , M. Volmer، نويسنده , , A. Hohl، نويسنده , , G. Vanko، نويسنده , , S. Streit، نويسنده , , James M. Tolan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
2277
To page :
2280
Abstract :
X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si LII,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the LII,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO2. Indications of sub-oxidic contributions to the LII,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO.
Keywords :
A. Amorphous materials
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309229
Link To Document :
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