Title of article :
Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn Original Research Article
Author/Authors :
Jungang Zhang، نويسنده , , Changtai Xia، نويسنده , , Qun Deng، نويسنده , , Wusheng Xu، نويسنده , , Hongsheng Shi، نويسنده , , Feng Wu، نويسنده , , Jun Xu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
1656
To page :
1659
Abstract :
Tin oxide doped β-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. β-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing.
Keywords :
A. Oxides , B. Crystal Growth , C. X-ray diffraction , D. Optical properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2006
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309431
Link To Document :
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