Title of article :
Defect structure and electrical properties of molybdenum disulphide Original Research Article
Author/Authors :
M. Potoczek، نويسنده , , K. Przybylski، نويسنده , , M. Rekas، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
2528
To page :
2535
Abstract :
Electrical conductivity of molybdenum disulphide was studied in a helium–sulphur gas mixture as a function of temperature (1073–1273 K). It was found that over the whole temperature and sulphur pressure range (10–6600 Pa) studied, the material exhibits p-type conductivity. Based on literature intrinsic electronic disorder data as well as measured electrical conductivity results a defect model has been proposed. This model involves electron holes and doubly ionized interstitial sulphur ions as majority point defects as well as electrons and acceptor-type foreign ions as minority defects.
Keywords :
A. Inorganic compounds , A. Semiconductors , D. Defects , D. Electrical conductivity
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2006
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309564
Link To Document :
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