In-situ current–voltage characteristics of the n+-type GaAs substrate in HF:Et-OH electrolyte Original Research Article

In-situ characterisation of the n+-GaAs/HF:Et-OH interface is studied by current–voltage, J(V). The experimental current-potential exhibits the presence of three potential regions, which are attributed to different reaction mechanisms between HF and n+-type GaAs surface. Depending on HF concentration a current peak appears in the J(V) characteristics. Scanning electron microscopy (SEM) images of samples at different point of the J(V) characteristic exhibits different surface morphologies which depend strongly on the electrochemical anodization conditions.