Title of article :
Atomistic study of the pressure-induced phase-transition mechanism in GaAs by Möbius inversion potentials
Original Research Article
Author/Authors :
Jin-Cai Wu، نويسنده , , Nanxian Chen، نويسنده , , Huaiyu Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
In this work, the phase transition from zincblende (B3) to rocksalt (B1) structure in bulk GaAs is investigated by using Möbius inversion potentials. A Cm transition path is proposed from the molecular static simulation results, even though it is different from previously proposed transition paths Imm2, R3m and P32. The present Cm path is quite close to the previously suggested Imm2 path according to the crystal cell geometries and activation enthalpies. By comparison, the activation enthalpies along the R3m and P32 path are relative high. Therefore, the Imm2 mechanism, as a simplified model of the Cm one, is suggested to describe the microscopic process of the B3–B1 phase transition of GaAs. In this way, we investigate the changes of the system features during the transition process characterized by Imm2 mechanism and obtain a concise picture for the common B3–B1 transition. All the calculated results are compared to relevant experimental observations and other calculations.
Keywords :
A. Semiconductors , D. Phase transitions , D. Crystal structure
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids