• Title of article

    High-K dielectric PZN-based materials prepared by microwave sintering for reduction of defects Original Research Article

  • Author/Authors

    C.L. Li، نويسنده , , C.C. Chou، نويسنده , , H.F. Cheng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    5
  • From page
    611
  • To page
    615
  • Abstract
    The high-K dielectric ceramics of x(0.94Pb(Zn1/3Nb2/3)O3+0.06BaTiO3)+(1−x)PbZryTi1−yO3 (PBZNZT) have been prepared by conventional sintering (CS) and microwave sintering (MS). The dielectric properties were improved by MS process when the sintering temperature was increased. The dielectric constants of MS samples increase with the sintering temperature due to the larger grain size. The MS process not only can enhance the homogeneity but also suppress the segregation of PbO and ZnO to grain boundaries. This leads to the substantial improvement on the dielectric properties of PBZNZT samples. The maximum dielectric constant of MS samples sintered at 1100 °C for 2 h is about 25,200, which is markedly greater than that of CS samples.
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2008
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1310097