Title of article :
High-K dielectric PZN-based materials prepared by microwave sintering for reduction of defects Original Research Article
Author/Authors :
C.L. Li، نويسنده , , C.C. Chou، نويسنده , , H.F. Cheng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
611
To page :
615
Abstract :
The high-K dielectric ceramics of x(0.94Pb(Zn1/3Nb2/3)O3+0.06BaTiO3)+(1−x)PbZryTi1−yO3 (PBZNZT) have been prepared by conventional sintering (CS) and microwave sintering (MS). The dielectric properties were improved by MS process when the sintering temperature was increased. The dielectric constants of MS samples increase with the sintering temperature due to the larger grain size. The MS process not only can enhance the homogeneity but also suppress the segregation of PbO and ZnO to grain boundaries. This leads to the substantial improvement on the dielectric properties of PBZNZT samples. The maximum dielectric constant of MS samples sintered at 1100 °C for 2 h is about 25,200, which is markedly greater than that of CS samples.
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2008
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1310097
Link To Document :
بازگشت