Title of article :
Quality and mechanical reliability assessment of wafer-bonded micromechanical components
Author/Authors :
Petzold، M. نويسنده , , Bagdahn، J. نويسنده , , Katzer، D. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-1102
From page :
1103
To page :
0
Abstract :
Strength tests and fracture mechanics models for Silicon wafer-bonded components are presented which can be applied during the development of bonding technologies, for the yield improvement and failure analysis as well as for the reliability assessment of micromechanical sensors and actuators. Special attention is given to the influences of atomic bonding strength, the interface voids and the notches caused by etching steps prior to bonding on the fracture limit. If wafer-bonded interfaces are exposed to a mechanical loading for an extended time, e.g. in the order of months or years, stress corrosion effects decrease the bonding strength. As a consequence, stressed sensors and actuators fabricated by wafer bonding can suddenly fail during application after a load-dependent lifetime. Based on an appropriate fracture mechanics model, the time-to-failure data could be theoretically predicted. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13101
Link To Document :
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