Electrical resistance of Rb4C60 under pressure Original Research Article

We report the results of direct in situ resistance measurements of Rb4C60 under high pressure up to 2 GPa, in the temperature range 90–400 K. The resistance changes smoothly with pressure and temperature without sharp anomalies, and all data sets can be fitted to the same theoretical semiconductor model. We find no signs of the insulator-to-metal transition previously reported in this range, but the fitted band gap decreases with pressure and such a transition may possibly take place above 5 GPa.