Author/Authors :
Chunyuan He، نويسنده , , Chunxiao Gao، نويسنده , , Yanzhang Ma، نويسنده , , Bingguo Liu، نويسنده , , Ming Li، نويسنده , , Xiaowei Huang، نويسنده , , Aimin Hao، نويسنده , , Cuiling Yu، نويسنده , , Dongmei Zhang، نويسنده , , Hongwu Liu، نويسنده , , Guangtian Zou، نويسنده ,
Abstract :
In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70–100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.