Hopping conductivity of Ni-doped p-CdSb in strong magnetic fields Original Research Article

Magnetoresistance (MR) of oriented single crystals of the anisotropic semiconductor p-CdSb doped with 2 at% of Ni is investigated between T=1.5 and 300 K in transversal pulsed magnetic fields up to B=30 T. In fields B∼4–15 T at T below 4.2 K, the resistivity obeys the law ln ρ∼η[Bϕ(B)]1/2 with ϕ(B)=a(0)/a(B), where a is the carrier localization radius and parameter η depends on a(0), on the acceptor concentration NA and on the direction of the magnetic field with respect to the crystallographic axes, but does not depend on T. Such behavior gives evidence for MR realized by hopping charge transfer over the nearest-neighbor sites in strong magnetic field. The analysis of the experimental data yields the values of η, agreeing with calculated ones within an error of 10%, taking into account the effects of the anisotropy of the acceptor states and of the explicit dependence of a(B) due to the increase in the activation energy of shallow acceptors in magnetic field and the sensitivity of the metal–insulator transition to B.