Title of article
Comparative study of the p+ layer created in CdTe films by nitric–phosphoric etching and chemical-deposition methods
Author/Authors
Osvaldo Vigil، نويسنده , , Ram?n Ochoa-Land?n، نويسنده , , Jes?s Fandi?o، نويسنده , , Francisco Cruz-Gandarilla، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
404
To page
406
Abstract
The physical properties of the etched CdTe surfaces obtained during the process of formation of a p+ region on CdTe surface films using (i) a nitric/phosphoric acid mixture and (ii) a chemical Te-deposition method involving thermal annealing have been compared in this study. This study suggests the chemical-deposition method as an alternative to the chemical-etching methods for use in back-contact technology to increase the efficiency of CdTe solar cells.
Keywords
A. Thin films , D. Electrical properties , A. Semiconductors
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2010
Journal title
Journal of Physics and Chemistry of Solids
Record number
1310966
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