Title of article :
Tunneling in 2-D quantum dots via quantum adiabatic switching route Original Research Article
Author/Authors :
Manas Ghosh، نويسنده , , Subhasree Ghosh، نويسنده , , S.P. Bhattacharyya، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
7
From page :
745
To page :
751
Abstract :
We explore the phenomenon of tunneling in single carrier 2-D quantum dot by quantum adiabatic switching route. The confinement in the y-direction is kept harmonic which ensures that tunneling is allowed only along the x-direction. The harmonic confinement potential is kept fixed and a constant external magnetic field is applied along the z-direction. The growth of probability density in the classically forbidden zones and tunneling current are monitored critically which reveals how tunneling significantly depends on the barrier parameters. The efficacy of the switching function in enforcing adiabaticity of the evolution is demonstrated. The effective mass, barrier width, and height emerge as important control parameters.
Keywords :
A. Electronic materials , A. Nanostructures , A. Quantum wells , A. Semiconductors , D. lattice dynamics
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2010
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1311047
Link To Document :
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