• Title of article

    Photocatalytic O2 evolution performances of Cd1+xIn2−2xSnxO4 (x=0.1, 0.3, 0.5, 0.7, 1.0) conducting oxides Original Research Article

  • Author/Authors

    Xianli Huang، نويسنده , , Haifeng Shi، نويسنده , , Jun Lv، نويسنده , , Zhaosheng Li، نويسنده , , ZHIGANG ZOU، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    880
  • To page
    883
  • Abstract
    The conducting oxides solid solutions of Cd1+xIn2−2xSnxO4 (x=0.1, 0.3, 0.5, 0.7, 1.0) were prepared via a solid state reaction method. The band gaps were estimated to be 2.4 eV for x=1.0, 2.5 eV for x=0.7, 2.6 eV for x=0.5, 2.7 eV for x=0.3 and 2.8 eV for x=0.1. Oxygen could be evolved over Cd2SnO4 under the irradiation of Xe-lamp or even visible light (λ>420 nm), while the others could only work in the UV-light range. Raman showed the cation distribution in Cd2SnO4 is ordered, while that in the others is disordered. The cations distribution was proposed to be the cause of the difference in photocatalytic O2-evolution activities.
  • Keywords
    A. Semiconductor , D. Crystal structure , D. Electronic structure
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2010
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1311069