• Title of article

    Comprehensive study of high-Tc interface superconductivity Original Research Article

  • Author/Authors

    G. Logvenov، نويسنده , , A. Gozar، نويسنده , , V.Y. Butko، نويسنده , , A.T. Bollinger، نويسنده , , N. Bozovic، نويسنده , , Z. Radovic، نويسنده , , I. Bozovic، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    7
  • From page
    1098
  • To page
    1104
  • Abstract
    Using ALL-MBE technique, we have synthesized different heterostructures consisting of an insulator La2CuO4 (I) and a metal La1.56Sr0.44CuO4 (M) layer neither of which is superconducting by itself. The M–I bilayers were superconducting with a critical temperature Tc≈30–36 K. This highly robust phenomenon is confined within 1–2 nm from the interface and is primarily caused by the redistribution of doped holes across the interface. In this paper, we present a comprehensive study of the interface superconductivity by a range of experimental techniques including transport measurements of superconducting properties.
  • Keywords
    A. Oxides , A. Thin films , B. Epitaxial growth , D. Superconductivity , D. Crystal structure
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2010
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1311107