Title of article :
Phase stability and electronic structure of Si2Sb2Te5 phase-change material
Original Research Article
Author/Authors :
Baisheng Sa، نويسنده , , Nahihua Miao، نويسنده , , Jian Zhou، نويسنده , , Zhitang Song)، نويسنده , , Zhimei Sun، نويسنده , , Rajeev Ahuja، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si2Sb2Te5, a newly synthesized phase-change material. The results show that Si2Sb2Te5 tends to decompose into Si1Sb2Te4 or Si1Sb4Te7 or Sb2Te3, therefore, a nano-composite containing Si1Sb2Te4, Si1Sb4Te7 and Sb2Te3 may be self-generated from Si2Sb2Te5. Hence Si2Sb2Te5 based nano-composite is the real structure when Si2Sb2Te5 is used in electronic memory applications. The present results agree well with the recent experimental work.
Keywords :
D. Electronic structure , A. Nanostructure , C. ab initio calculations , D. Crystal structure
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids