• Title of article

    Electrical properties of TlGaTe2 single crystals under hydrostatic pressure Original Research Article

  • Author/Authors

    S.N. Mustafaeva، نويسنده , , Sh.G. Gasymov، نويسنده , , E.M. Kerimova، نويسنده , , M.M. Asadov، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    657
  • To page
    660
  • Abstract
    The effect of hydrostatic pressure (up to 0.82 GPa) on the electric properties of chain TlGaTe2 single crystals has been investigated in the temperature range 77–296 K. It has been shown that pressure leads to a considerable increase of conductivity (σ⊥) across the chains of TlGaTe2 single crystals. Parameters of localized states in the band gap of TlGaTe2 single crystal according to the low-temperature electrical measurements were obtained at various pressures.
  • Keywords
    A. Semiconductors , C. High pressure , B. Crystal Growth
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2011
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1311359